This article is cited in 14 papers

Non-electronic properties of semiconductors (atomic structure, diffusion)

Kinetics of crack formation in porous silicon

D. S. Gaev, S. Sh. Rekhviashvili

Kabardino-Balkar State University, Nal'chik

Abstract: Crack formation in electrochemical porous silicon has been experimentally and theoretically studied. It is established that the kinetics of porous silicon cracking can be described by the S-shaped Weibull distribution. This feature appears to be of general character; it may be observed during crack formation in other porous solid materials.

Received: 05.07.2011
Accepted: 11.07.2011

 English version: Semiconductors, 2012, 46:2, 137–140

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