V. A. Kozlov, S. V. Obolensky, V. B. Shmagin, Z. F. Krasil'nik, “Natural fluctuations in tunneling-current distribution over the area of a reverse-biased silicon $p$–$n$ junction”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 1,Pages 134

This article is cited in 2 papers

Semiconductor physics

Natural fluctuations in tunneling-current distribution over the area of a reverse-biased silicon $p$–$n$ junction

V. A. Kozlov^a, S. V. Obolensky^b, V. B. Shmagin^a, Z. F. Krasil'nik^a

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod

Abstract: The Monte Carlo method is used for calculating the distributions of the electric field, potential, and interband-tunneling probability over the area of a reverse-biased $p$–$n$ junction, taking into account the discreteness of the charge distribution of ionized donors and acceptors. The calculations are carried out in a three-dimensional approximation on the basis of the principle of superposition of the electric fields of “ionized-donor-ionized-acceptor” ion pairs. It is shown that, in the region of clusters of three or more ion pairs with the characteristic distance of about half of the de-Broglie wavelength between them, an increase in the tunneling probability related to a local increase in the electric-field strength is observed.

Received: 30.06.2011
Accepted: 11.07.2011