This article is cited in 9 papers

Semiconductor physics

Modelling and simulation of saturation region in double gate Graphene nanoribbon transistors

Mahdiar Ghadiry^a, Mahdieh Nadi^b, Meysan Rahmani^c, Mohamad Ahmadi^c, Asrulnizam Abd Mahaf<sup>a

a</sup> School of Electrical and Electronic Engineering, Engineering Campus, University Sains Malaysia, Penang, Malaysia
^b Department of Computer Engineering, Ashtian Branch, Islamic Azad University, Ashtian, Iran
^c Faculty of Electrical and Electronics, University Technologi Malaysia, Skudai, Malaysia

Abstract: A novel analytical model for surface field distribution and saturation region length for double gate graphene nanoribbon transistors has been proposed. The solution for surface potential and electric field has been derived based on Poisson equation. Using the proposed models, the effects of several parameters such as drain-source voltage, oxide thickness and channel length on the length of saturation region and electric field near the drain have been studied.

Received: 23.05.2011
Accepted: 28.06.2011

Language: English

 English version: Semiconductors, 2012, 46:1, 126–129

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