This article is cited in 4 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs

M. M. Sobolev, I. M. Gadzhiev, I. O. Bakshaev, V. N. Nevedomskiy, M. S. Buyalo, Yu. M. Zadiranov, R. V. Zolotareva, E. L. Portnoĭ

Ioffe Institute, St. Petersburg

Abstract: The results of experimental studies concerning the optical polarization anisotropy of electroluminescence and absorption spectra of systems with a varied number of tunnel-coupled vertically correlated In(Ga)As/GaAs quantum dots (QDs), built into a double-section laser with equal-length sections, are presented. One such system is a QD superlattice exhibiting the Wannier–Stark effect. The involvement of heavyhole ground states in optical transitions for light polarized both in the plane perpendicular to the growth axis ($X$–$Y$) and along the growth direction $Z$ of the structure was observed. The degree of polarization anisotropy depends on the height of vertically correlated QDs and the QD superlattice: the total thickness of all In(Ga)As QD layers and GaAs spacers between the QDs, which is related to the $Z$ component of the wave function of heavy-hole ground states for vertically correlated QDs and for the QD superlattice.

Received: 27.06.2011
Accepted: 11.07.2011

 English version: Semiconductors, 2012, 46:1, 93–98

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