International Conference of Physicists.SPb, October 20-24, 2025, Saint Petersburg

Application of carbon for the formation of discrete aluminum-based zones during their thermomigration in silicon

B. M. Seredin, V. P. Popov, A. V. Malibashev, A. D. Stepchenko, A. N. Zaichenko

South-Russian State Polytechnic University named M. I. Platov, 346428 Novocherkassk, Russia

Abstract: A system of discrete linear zones in the form of an orthogonal grid of intersecting rectilinear zones, rings or squares, when they thermomigrate through a silicon wafer, forms epitaxial channels forming through-closed cells demanded by power electronics. Experimental studies have revealed specific defects in the form of spherical bumps in the zones from the starting surface. The presence of such defects violates the specified topology of the channels, making post-migration processing impossible. In this paper, the causes of these defects are established and a method is proposed for their effective elimination using a thin layer of carbon in the form of soot.

Received: 05.05.2025
Revised: 17.07.2025
Accepted: 18.07.2025

DOI: 10.61011/FTP.2025.05.61478.8049