International Conference of Physicists.SPb, October 20-24, 2025, Saint Petersburg

Complexes of intrinsic point defects in silicon formed as a result of high-energy xenon ion implantation and post-implantation annealing

N. A. Maslova^a, D. V. Danilov^ab, O. F. Vyvenko^a, V. A. Skuratov^cde, V. A. Volodin^fg, A. E. Kalyadin^b, N. A. Sobolev<sup>b

a</sup> Saint Petersburg State University, 199034 St. Petersburg, Russia
^b Ioffe Institute, 194021 St. Petersburg, Russia
^c Joint Institute for Nuclear Research, 141980 Dubna, Moscow region, Russia
^d Dubna State University, 141982 Dubna, Moscow region, Russia
^e National Engineering Physics Institute "MEPhI", 115409 Moscow, Russia
^f Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia
^g Novosibirsk State University, 630090 Novosibirsk, Russia

Abstract: Investigated the depth distribution of point defect complexes in single- crystal silicon irradiated with 167 MeV xenon ions at a dose of 5 $\cdot$ 10$^{11}$ cm$^{-2}$ and annealed in the temperature range of 400–600$^\circ$C. We show the formation of a large number of vacancy complexes throughout the implantation region, as well as the presence of a potential barrier at the projection implantation depth. Profiling of the luminescent signal across the wafer depth showed an anomalously large depth of the W/W' line corresponding to interstitial complexes, which is explained by the participation of accelerated diffusion mechanisms in the formation of the distribution of this type of defects.

Received: 05.05.2025
Revised: 25.07.2025
Accepted: 25.07.2025

DOI: 10.61011/FTP.2025.05.61477.8047