International Conference of Physicists.SPb, October 20-24, 2025, Saint Petersburg

Application of 6H-SiC/3C-SiC(001) composite substrates for growth of cubic silicon carbide by sublimation method

A. V. Myasoedov^a, M. G. Mynbaeva^a, S. Yu. Priobrazhenskii^ab, D. G. Amelchuk^a, S. P. Lebedev^a, A. A. Lebedev<sup>a

a</sup> Ioffe Institute, 194021 St. Petersburg, Russia
^b Saint Petersburg Electrotechnical University "LETI", 197022 St. Petersburg, Russia

Abstract: The paper presents the results of a study of thick layers of cubic silicon carbide polytype grown using 6H-SiC/3C-SiC(001) composite substrates of our own manufacture. The layers were grown by the sublimation method in a vacuum chamber in the temperature range of 1600–1800$^\circ$C. The study was carried out using optical and transmission electron microscopy and was aimed to characterize the stability of growing a layer of cubic silicon carbide with the orientation (001). An analysis of the defect structure of the layer is presented in comparison with a layer of silicon carbide with the orientation (111), obtained on a wafer of a hexagonal polytype.

Received: 04.05.2025
Revised: 19.07.2025
Accepted: 21.07.2025

DOI: 10.61011/FTP.2025.05.61476.8000