International Conference of Physicists.SPb, October 20-24, 2025, Saint Petersburg

Pulse power boost converter on gallium nitride transistors

E. A. Shershunova^a, S. I. Moshkunov^a, V. Yu. Khomich^a, A. A. Igolkin<sup>b

a</sup> Institute of Problems of Electrophysics of the Russian Academy of Sciences, 191186 St. Petersburg, Russia
^b Samara National Research University, 443086 Samara, Russia

Abstract: A module of a pulse power boost DC/DC voltage converter with an output voltage of 130 V, a power of 3 kW and an operating frequency of 100 kHz on field-effect transistors based on gallium nitride has been developed and successfully tested. The power loss calculation on the elements of the power converter has been performed. The main mechanism of losses due to the heating of the crystal in the conduction state was revealed. The efficiency of the converter operating at maximum power was experimentally obtained to be 98.5%, which coincided well with the calculation.

Received: 28.04.2025
Revised: 16.07.2025
Accepted: 23.07.2025

DOI: 10.61011/FTP.2025.05.61471.7906