International Conference of Physicists.SPb, October 20-24, 2025, Saint Petersburg

Self-catalytic growth of GaInP nanostructures on silicon substrates from vapor phase: choice of source composition and catalytic droplets

L. B. Karlina^a, A. S. Vlasov^a, R. V. Levin^a, I. P. Sotnikov<sup>abc

a</sup> Ioffe Institute, 194021 St. Petersburg, Russia
^b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, 194021 St. Petersburg, Russia
^c Institute for Analytical Instrumentation, Russian Academy of Sciences, 198095 St. Petersburg, Russia

Abstract: The article presents studies of self-catalytic growth of GaInP nanostructures on silicon substrates with orientation (111) from saturated vapors of phosphorus and indium in a quasi-closed volume, aimed at studying the methods of controlling the composition of the obtained structures. Studies of vibrational properties and photoluminescence have shown that by choosing the optimal combination of source and catalytic droplet compositions, it is possible to obtain GaInP nanostructures emitting in the range from 1.37 to 1.9 eV. Differences in the morphology of the obtained nanostructures depending on the conditions of their formation have been established.

Received: 30.04.2025
Revised: 26.06.2025
Accepted: 28.06.2025

DOI: 10.61011/FTP.2025.05.61470.7955