V. S. Kalinovskii, R. V. Levin, B. V. Pushnii, M. N. Mizerov, V. D. Rumancev, V. M. Andreev, “Fabrication and study of $p$–$n$ structures with crystalline inclusions in the space-charge region”, Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 12,Pages 1677

This article is cited in 2 papers

Semiconductor physics

Fabrication and study of $p$–$n$ structures with crystalline inclusions in the space-charge region

V. S. Kalinovskii^a, R. V. Levin^a, B. V. Pushnii^b, M. N. Mizerov^b, V. D. Rumancev^a, V. M. Andreev^a

^a Ioffe Institute, St. Petersburg
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg

Abstract: A new model of connecting elements for monolithic multijunction solar cells based on III–V compounds is proposed, in which $p$–$n$ junctions with crystalline inclusions of a foreign semiconductor material in the space-charge region are used instead of $p^{++}$–$n^{++}$ tunnel junctions. The study shows that the introduction of crystalline inclusions to the space-charge region of the $p$–$n$ junction in a GaSb-based structure allows current densities of $\sim$ 50 A/cm$^2$ at an ohmic loss of $\sim$ 0.01 $\Omega$ cm$^2$. The obtained characteristics of the connecting elements with crystalline inclusions show their applicability to multijunction solar cells for concentrated light conversion.

Received: 15.04.2013
Accepted: 23.05.2013