This article is cited in 22 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Biexcitons formed from spatially separated electrons and holes in quasi-zero-dimensional semiconductor nanosystems

S. I. Pokutnii

G. V. Kurdyumov Institute for Metal Physics, National Academy of Sciences of Ukraine

Abstract: A theory of biexcitons (formed from spatially separated electron and holes) in nanosystems that consist of zinc-selenide quantum dots synthesized in borosilicate glassy matrices is developed. The dependences of the total energy and the binding energy of the singlet ground biexciton state in such a system on the spacing between the quantum-dot surfaces and the quantum-dot radius are derived by the variational method. It is shown that biexciton formation is of the threshold character and possible in nanosystems, in which the spacing between the quantum-dot surfaces is larger than a certain critical spacing.

Received: 11.03.2013
Accepted: 19.03.2013

 English version: Semiconductors, 2013, 47:12, 1626–1635

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