This article is cited in 3 papers

Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 2013

Study of heterostructures with a combined In(Ga)As/GaAs quantum dot/quantum well layer and a Mn $\delta$ layer

E. D. Pavlova, A. P. Gorshkov, A. I. Bobrov, N. V. Malekhonova, B. N. Zvonkov

Lobachevsky State University of Nizhny Novgorod

Abstract: Using high-resolution transmission electron microscopy and photoelectric spectroscopy methods, the effect of Mn $\delta$ layer embedding and GaAs coating layer growth techniques in structures with In(Ga)As/GaAs quantum dots and wells on their structural and optoelectronic characteristics is studied. It is shown that the low-temperature GaAs coating layer in a structure with a Mn $\delta$ layer is structurally inhomogeneous and can cause a decrease in the quantum-dot photosensitivity.

Received: 22.04.2013
Accepted: 30.04.2013

 English version: Semiconductors, 2013, 47:12, 1591–1594

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