This article is cited in 7 papers

Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 2013

Structural studies of a ferromagnetic GaMnSb layer

A. I. Bobrov, E. D. Pavlova, A. V. Kudrin, N. V. Malekhonova

Lobachevsky State University of Nizhny Novgorod

Abstract: The crystalline structure and composition of a GaMnSb film is studied. The film is produced on a GaAs (100) substrate by deposition from laser plasma in a hydrogen flux at a temperature of 400$^\circ$C. The formation of GaMn inclusions in the GaSb:Mn matrix is detected. The stoichiometry ratio of the inclusions corresponds to that of the Ga$_{162.5}$Mn$_{101.5}$ compound.

Received: 22.04.2013
Accepted: 30.04.2013

 English version: Semiconductors, 2013, 47:12, 1587–1590

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