Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 2013

Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots

N. S. Volkova, A. P. Gorshkov, A. V. Zdoroveyshchev, O. V. Vikhrova, B. N. Zvonkov

Lobachevsky State University of Nizhny Novgorod

Abstract: The effect of the incorporation of an InGaAs quantum well into structures with InAs/GaAs quantum dots grown by gas-phase epitaxy on their optoelectronic properties is analyzed in the mode with increased growth-interruption time. It is established that the quantum-dot energy spectrum is weakly sensitive to variations in the thickness and composition of the double InGaAs/GaAs coating layer. The deposition of a quantum well onto a layer of quantum dots decreases the emission-barrier effective height in them. The conditions under which the quantum well can be used for protecting the quantum-dot active layer against penetration by defects generated during structure-surface anodic oxidation are determined.

Received: 22.04.2013
Accepted: 30.04.2013

 English version: Semiconductors, 2013, 47:12, 1583–1586

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