This article is cited in 4 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures

A. A. Lebedev, M. V. Zamoryanskaya, S. Yu. Davydov, D. A. Kirilenko, S. P. Lebedev, L. M. Sorokin, D. B. Shustov, M. P. Scheglov

Ioffe Institute, St. Petersburg

Abstract: Transmission electron microscopy and the cathodoluminescence method are used to study the transition region in 3C-SiC/6H-SiC heterostructures. It is shown that this region is, as a rule, constituted by alternating 3C-SiC and 6H-SiC layers with the possible inclusion of other silicon carbide polytypes. An assumption is made that this structure of the transition region can be explained in terms of the model of spinodal decomposition.

Received: 03.04.2013
Accepted: 16.04.2013

 English version: Semiconductors, 2013, 47:11, 1539–1543

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