This article is cited in 3 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix

Ya. A. Parkhomenko, È. V. Ivanov, K. D. Moiseev

Ioffe Institute, St. Petersburg

Abstract: The electrical and electroluminescence properties of a single narrow-gap heterostructure based on a $p$–$n$ junction in indium arsenide, containing a single layer of InSb quantum dots in the InAs matrix, are studied. The presence of quantum dots has a significant effect on the shape of the reverse branch of the current-voltage characteristic of the heterostructure. Under reverse bias, the room-temperature electroluminescence spectra of the heterostructure with quantum dots, in addition to a negative-luminescence band with a maximum at the wavelength $\lambda$ = 3.5 $\mu$m, contained a positive-luminescence emission band at 3.8 $\mu$m, caused by radiative transitions involving localized states of quantum dots at the type-II InSb/InAs heterointerface.

Received: 02.04.2013
Accepted: 08.04.2013

 English version: Semiconductors, 2013, 47:11, 1523–1527

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