This article is cited in 2 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Features of the electroluminescence spectra of quantum-confined silicon $p^+$–$n$ heterojunctions in the infrared spectral region

N. T. Bagraev^a, L. E. Klyachkin^a, R. V. Kuz'min^a, A. M. Malyarenko^a, V. A. Mashkov<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University

Abstract: The results of studying the characteristics of optical emission in various regions of quantum-confined silicon $p^+$–$n$ heterojunctions heavily doped with boron are analyzed. The results obtained allow one to conclude that near-infrared electroluminescence arises near the heterointerface between the nanostructured wide-gap silicon $p^+$-barrier heavily doped with boron and $n$-type silicon (100), the formation of which included the active involvement of boron dipole centers.

Received: 01.04.2013
Accepted: 08.04.2013

 English version: Semiconductors, 2013, 47:11, 1517–1522

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