This article is cited in 4 papers

Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 2013

Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells

M. Ya. Vinnichenko^a, L. E. Vorob'ev^a, D. A. Firsov^a, M. O. Mashko^a, R. M. Balagula^a, G. L. Belenky^b, L. Shterengas^b, G. Kipshidze<sup>b

a</sup> Peter the Great St. Petersburg Polytechnic University
^b State University of New York at Stony Brook, 11794 Stony Brook, New York, USA

Abstract: The current dependences of spontaneous luminescence in mid-IR injection lasers with InGaAsSb/InAlGaAsSb quantum wells are experimentally studied in the subthreshold and lasing modes. The current dependence of the carrier concentration is determined using the current dependence of the total spontaneous luminescence. A lack of carrier concentration saturation with current in the lasing mode was observed. It is shown that this can be due to carrier heating at low quantum-confinement levels and an increase in light absorption by free holes in the waveguide.

Received: 22.04.2013
Accepted: 30.04.2013

 English version: Semiconductors, 2013, 47:11, 1513–1516

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