K. P. Kalinin, S. S. Krishtopenko, K. V. Marem'yanin, K. E. Spirin, V. I. Gavrilenko, A. A. Biryukov, N. V. Baidus, B. N. Zvonkov, “Rashba spin splitting and cyclotron resonance in strained InGaAs/InP heterostructures with a two-dimensional electron gas”, Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 11,Pages <nobr>1497

This article is cited in 7 papers

Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 2013

Rashba spin splitting and cyclotron resonance in strained InGaAs/InP heterostructures with a two-dimensional electron gas

K. P. Kalinin^a, S. S. Krishtopenko^a, K. V. Marem'yanin^a, K. E. Spirin^a, V. I. Gavrilenko^a, A. A. Biryukov^b, N. V. Baidus^b, B. N. Zvonkov^b

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: Cyclotron resonance and magnetic transport in InP/InGaAs/InP heterostructures with axially symmetric quantum wells are studied experimentally at 4.2 K. An increase in the cyclotron mass at the Fermi level from 0.047$m_0$ to 0.057$m_0$ with an increase in the concentration of two-dimensional electrons from 5.5 $\times$ 10$^{11}$ to 2.1 $\times$ 10$^{12}$ см$^{-2}$ is shown. The values of the Rashba spin splitting at the Fermi level are determined from Fourier analysis of the beats of Shubnikov–de Haas oscillations. The obtained experimental data are compared with the theoretical results of self-consistent calculations of the energy spectrum and cyclotron masses of 2D electrons performed using the eight-band $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian.

Received: 22.04.2013
Accepted: 30.04.2013