This article is cited in 1 paper

Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 2013

Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy

M. N. Drozdov^a, A. V. Novikov^ab, D. V. Yurasov<sup>a

a</sup> Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod

Abstract: The effects of the growth temperature, composition, and elastic strains in separate layers on the segregation of antimony are studied experimentally for stressed SiGe structures grown by molecular beam epitaxy. It is established that the growth conditions and parameters of the structures exert an interrelated influence on the segregation of Sb: the degree of the influence of the composition and elastic stresses in the SiGe layers on Sb segregation depends on the growth temperature. It is shown that usage of a method previously proposed by us for the selective doping of silicon structures with consideration for the obtained dependences of Sb segregation on the growth conditions and parameters of the SiGe layers makes it possible to form SiGe structures selectively doped with antimony.

Received: 22.04.2013
Accepted: 30.04.2013

 English version: Semiconductors, 2013, 47:11, 1481–1484

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