V. Ya. Aleshkin, A. A. Afonenko, N. V. Dikareva, A. A. Dubinov, K. E. Kudryavtsev, S. V. Morozov, S. M. Nekorkin, “Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs”, Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 11,Pages <nobr>1486

This article is cited in 7 papers

Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 2013

Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs

V. Ya. Aleshkin^a, A. A. Afonenko^b, N. V. Dikareva^c, A. A. Dubinov^a, K. E. Kudryavtsev^a, S. V. Morozov^a, S. M. Nekorkin^c

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Belarusian State University, Minsk
^c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm$^2$ at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.

Received: 22.04.2013
Accepted: 30.04.2013