S. V. Morozov, V. V. Rumyantsev, K. E. Kudryavtsev, V. I. Gavrilenko, D. V. Kozlov, “Relaxation kinetics of impurity photoconductivity in <nobr>$p$</nobr>-Si:B with various levels of doping and degrees of compensation in high electric fields”, Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 11,Pages <nobr>1472

This article is cited in 3 papers

Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 2013

Relaxation kinetics of impurity photoconductivity in $p$-Si:B with various levels of doping and degrees of compensation in high electric fields

S. V. Morozov^ab, V. V. Rumyantsev^ab, K. E. Kudryavtsev^a, V. I. Gavrilenko^ab, D. V. Kozlov^ab

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod

Abstract: The relaxation of impurity photoconductivity in $p$-Si:B crystals subjected to pulsed optical excitation by a narrow-band continuously adjusted source of radiation in the range of “heating” (10–500 V/cm) electric fields is studied. A variation of dependence of the relaxation time on the electric field $E$ at $E >$ 75 V/cm due to the additional relaxation processes with the emission of an optical phonon is observed. The dependence of the rates of carrier relaxation on the intensity and wavelength of the excitation radiation indicates also that there is a long-lived excited state, which plays the role of a metastable trap level upon the relaxation of charge carriers.

Received: 22.04.2013
Accepted: 30.04.2013