This article is cited in 4 papers

Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 2013

Pseudomorphic GeSn/Ge (001) heterostructures

A. A. Tonkikh^ab, V. G. Talalaev^c, P. Werner<sup>a

a</sup> Max Planck Institute of Microstructure Physics, 06120 Halle, Germany
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^c Martin Luther University Halle-Wittenberg, ZIK SiLi-nano, 06120 Halle, Germany

Abstract: The synthesis of pseudomorphic GeSn heterostructures on a Ge (001) substrate by molecular-beam epitaxy is described. Investigations by transmission electron microscopy show that the GeSn layers are defect free and possess cubic diamondlike structure. Photoluminescence spectroscopy reveals interband radiative recombination in the GeSn quantum wells, which is identified as indirect transitions between the subbands of heavy electrons and heavy holes. On the basis of experimental data and modeling of the band structure of pseudomorphic GeSn compounds, the lower boundary of the bowing parameter for the indirect band gap is estimated as $b_L\ge$ 1.47 eV.

Received: 22.04.2013
Accepted: 30.04.2013

 English version: Semiconductors, 2013, 47:11, 1452–1455

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