This article is cited in 13 papers

Manufacturing, processing, testing of materials and structures

Models of the formation of oxide phases in nanostructured materials based on lead chalcogenides subjected to treatment in oxygen and iodine vapors

E. V. Maraeva, V. A. Moshnikov, Yu. M. Tairov

Saint Petersburg Electrotechnical University "LETI"

Abstract: Model concepts concerning control over the formation of oxide layers during the course of oxidation are developed on the basis of experimental results of studies of systematic features of the formation of nanostructured layers after diffusion annealing. Data on a variation in the composition of oxide phases as the extent of deviation from stoichiometry is changed in the initial lead chalcogenide are presented. Model concepts related to the possibility of varying the thickness of the coating oxide phases using annealing in an oxygen-containing medium are developed. It is shown that annealing in an iodine atmosphere ensures the effective penetration of oxygen into the grains, which is necessary for an increase in the photoluminescence efficiency.

Received: 21.02.2013
Accepted: 11.03.2013

 English version: Semiconductors, 2013, 47:10, 1422–1425

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