This article is cited in 3 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

The role of electron-electron interaction in the process of charge-carrier capture in deep quantum wells

L. V. Danilov, G. G. Zegrya

Ioffe Institute, St. Petersburg

Abstract: The role of electron-electron interaction in the process of electron capture to a deep quantum well is investigated. Using two-level and three-level quantum wells as examples, the basic electron-capture mechanisms, i.e., the interaction with optical phonons and the Coulomb electron-electron interaction, are considered, and the corresponding capture probabilities and electron lifetimes are calculated. The effect of Auger recombination on the charge-carrier distribution in a quantum well is also taken into account. With this taken into consideration, a set of rate equations is solved for a nonsteady-state mode, and the time dependences of the electron concentration at the ground energy level in the quantum well are found. The contributions of each of the recombination processes under consideration are shown.

Received: 06.03.2013
Accepted: 19.03.2013

 English version: Semiconductors, 2013, 47:10, 1336–1345

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