Semiconductor structures, low-dimensional systems, quantum phenomena

Effect of the annealing temperature on the low-temperature photoluminescence in Si:Er light-emitting structures grown by molecular-beam epitaxy

B. A. Andreev^a, N. A. Sobolev^b, D. V. Denisov^b, E. I. Shek<sup>b

a</sup> Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Ioffe Institute, St. Petersburg

Abstract: The photoluminescence spectra of light-emitting structures based on silicon doped with erbium during the course of molecular-beam epitaxy at a temperature of 500$^\circ$C are studied at 4.2 K on being annealed at 800–900$^\circ$C. Three sets of lines belonging to the emitting centers of erbium in silicon with a low oxygen-impurity concentration are revealed.

Received: 04.03.2013
Accepted: 18.03.2013

 English version: Semiconductors, 2013, 47:10, 1333–1335

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