This article is cited in 1 paper

Manufacturing, processing, testing of materials and structures

Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate

D. B. Shustov, A. A. Lebedev, S. P. Lebedev, D. K. Nelson, A. A. Sitnikova, M. V. Zamoryanskaya

Ioffe Institute, St. Petersburg

Abstract: $n$-3C-SiC/$n$-6H-SiC heterostructures grown by vacuum sublimation on CREE commercial 6H-SiC substrates are studied. Transmission electron microscopy (TEM) demonstrated that a transitional layer of varying thickness, composed of a mixture of 3C- and 6H-SiC polytypes, is formed on the substrate. A 3C polytype layer was obtained on the interlayer. Cathodoluminescence study of the surface of the film demonstrated that defects in the form of inclusions of another phase (6H-polytype), stacking faults, and twin boundaries (separating domains of cubic modification, grown in various orientations) are found on the surface and in the surface layer with a thickness on the order of 100 $\mu$m. Varying the growth conditions changes the concentration of various types of defects.

Received: 14.01.2013
Accepted: 21.01.2013

 English version: Semiconductors, 2013, 47:9, 1267–1270

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