This article is cited in 3 papers

Manufacturing, processing, testing of materials and structures

Properties of silicon films grown under different pressures in a plasma-forming system

D. M. Mitin^ab, A. A. Serdobintsev<sup>ab

a</sup> Saratov State University
^b Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences

Abstract: The influence of the working-gas pressure on the properties of thin silicon films synthesized by dc magnetron sputtering is investigated. Films obtained under lower pressures are characterized by lower roughness and resistivity. These features can qualitatively be explained by the longer free particle path in the deposition flux under lower pressure.

Received: 29.11.2012
Accepted: 10.12.2012

 English version: Semiconductors, 2013, 46:9, 1264–1266

Bibliographic databases:

•