This article is cited in 7 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Anisotropy of the electron $g$ factor in quantum wells based on cubic semiconductors

P. S. Alekseev

Ioffe Institute, St. Petersburg

Abstract: A new mechanism for the spin splitting of electron levels in asymmetric quantum wells based on GaAs-type semiconductors relative to rotations of the magnetic field in the well plane is suggested. It is demonstrated that the anisotropy of the Zeeman splitting (linear in a magnetic field) arises in asymmetric quantum wells due to the interface spin-orbit terms in the electron Hamiltonian. In the case of symmetric quantum wells, it is shown that the anisotropy of the Zeeman splitting is a cubic function of the magnitude of the magnetic field, depends on the direction of the magnetic field in the interface plane as the fourth-order harmonic, and is governed by the spin-orbit term of the fourth order by the kinematic momentum in the electron Hamiltonian of a bulk semiconductor.

Received: 04.03.2013
Accepted: 11.03.2013

 English version: Semiconductors, 2013, 47:9, 1241–1245

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