This article is cited in 9 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Optical orientation of electrons in compensated semiconductors

I. A. Kokurin^ab, P. V. Petrov^a, N. S. Averkiev<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b Ogarev Mordovia State University, Saransk

Abstract: The theory of the optical orientation of charge carriers in compensated III–V semiconductors and quantum wells for the case where electrons are excited to the conduction band from Mn-charged acceptor states is presented. It is shown that, in GaAs/AlGaAs quantum wells, the degree of the spin orientation of conduction-band electrons in this excitation scheme can be as high as 85%. This spin-orientation enhancement results from an increase in the heavy-hole contribution to the acceptor state in the vicinity of the defect center rather than from level splitting caused by quantum confinement. It is shown that the degree of circular polarization of the photoluminescence emitted upon the recombination of electrons thermalized at the bottom of the band with holes occupying the acceptor ground state in a quantum well can exceed 70%.

Received: 14.02.2013
Accepted: 20.02.2013

 English version: Semiconductors, 2013, 47:9, 1232–1240

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