This article is cited in 2 papers

Manufacturing, processing, testing of materials and structures

Effect of annealing in argon on the properties of thermally deposited gallium-oxide films

V. M. Kalygina, V. V. Vishnikina, A. N. Zarubin, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, S. Yu. Tsupiy, T. M. Yaskevich

Siberian Physical-Technical Institute of the Tomsk State University

Abstract: The effect of the annealing temperature on the I–V, C–I, and G–V characteristics and transparency of gallium-oxide films is investigated. The films are fabricated by the thermal evaporation of Ga$_2$O$_3$ powder on n-GaAs wafers. It is shown that the films which are amorphous after deposition crystallize upon annealing at temperatures $T_{\mathrm{an}}\ge$ 800$^\circ$C. The electrical characteristics and photoresponse of the V/Ni–GaAs–GaAs–Ga$_x$O$_y$–V/Ni samples to visible radiation depend on the structure and phase composition of the films.

Received: 20.12.2012
Accepted: 10.01.2013

 English version: Semiconductors, 2013, 47:8, 1130–1136

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