This article is cited in 11 papers

Electronic properties of semiconductors

Effect of temperature and rare-earth doping on charge-carrier mobility in indium-monoselenide crystals

A. Sh. Abdinov^a, R. F. Babayeva^b, S. I. Amirova^a, R. M. Rzaev<sup>a

a</sup> Baku State University
^b Azerbaijan State Economic University

Abstract: In the temperature range $T$ = 77–600 K, the dependence of the charge-carrier mobility $(\mu)$ on the initial dark resistivity is experimentally investigated at 77 K $(\rho_{d0})$, as well as on the temperature and the level $(N)$ of rare-earth doping with such elements as gadolinium (Gd), holmium (Ho), and dysprosium (Dy) in $n$-type indium-monoselenide (InSe) crystals. It is established that the anomalous behavior of the dependences $\mu(T)$, $\mu(\rho_{d0})$, and $\mu(N)$ found from the viewpoint of the theory of charge-carrier mobility in crystalline semiconductors is related, first of all, to partial disorder in indium-monoselenide crystals and can be attributed to the presence of random drift barriers in the free energy bands.

Received: 29.10.2012
Accepted: 06.11.2012

 English version: Semiconductors, 2013, 47:8, 1013–1017

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