RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2013 Volume 47, Issue 7, Pages 970–978 (Mi phts7972)

This article is cited in 4 papers

Semiconductor physics

Theory of steady-state plane tunneling-assisted impact ionization waves

A. S. Kyuregyan

Russian Electrotechnical Institute Named after V. I. Lenin

Abstract: The effect of band-to-band and trap-assisted tunneling on the properties of steady-state plane ionization waves in $p^+$$n$$n^+$-structures is theoretically analyzed. It is shown that such tunneling-assisted impact ionization waves do not differ in a qualitative sense from ordinary impact ionization waves propagating due to the avalanche multiplication of uniformly distributed seed electrons and holes. The quantitative differences of tunneling-assisted impact ionization waves from impact ionization waves are reduced to a slightly different relation between the wave velocity $u$ and the maximum field strength $E_M$ at the front. It is shown that disregarding impact ionization does not exclude the possibility of the existence of tunneling-assisted ionization waves; however, their structure radically changes, and their velocity strongly decreases for the same $E_M$. A comparison of the dependences $u(E_M)$ for various ionization-wave types makes it possible to determine the conditions under which one of them is dominant. In conclusion, unresolved problems concerning the theory of tunneling-assisted impact ionization waves are discussed and the directions of further studies are outlined.

Received: 02.10.2012
Accepted: 11.10.2012


 English version:
Semiconductors, 2013, 47:7, 978–986

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2026