Abstract:
Presents the modeling of transport and radiation characteristics of previously experimentally studied light-emitting lateral silicon $p^+$–$i$–$n^+$ transistors with an array of self-assembled Ge(Si) nanoislands grown on a silicon on insulator substrate. The performed modeling made it possible to quantitatively explain experimental results indicating the possibility to control the spatial distribution of radiation intensity in such light-emitting transistors by applying a bias voltage to the substrate. It is shown that such a possibility arises due to the control of the conduction channel for electrons or holes formed at the boundary of the structure with a hidden oxide.
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