International Conference on Physics.SPb/2025

Control of charge carrier density in photo-FET structures based on atomically thin CVD-MoS$_2$

I. A. Eliseyev^a, V. A. Kurtash^b, J. Pezoldt^b, V. Yu. Davydov<sup>a

a</sup> Ioffe Institute, 194021 St. Petersburg, Russia
^b Technische Universität Ilmenau, 100565 Ilmenau, Germany

Abstract: Optimization of the properties of two-dimensional semiconductors for their application in various types of electronic devices is one of the most important challenges in modern nanoelectronics. In this paper, the features of controlling the concentration of charge carriers in monolayer and bilayer MoS$_2$ by changing the gate voltage of the transistor are investigated. The influence of MoS$_2$ inclusions of two-layer thickness with regular (3$R$) and irregular stacking on the degree of nonlinearity of the current-voltage characteristics and the response of MoS$_2$ parameters to the gate voltage is investigated.

Received: 06.05.2025
Revised: 04.07.2025
Accepted: 10.07.2025

DOI: 10.61011/FTP.2025.04.61256.8116