International Conference on Physics.SPb/2025

Effect of irradiation temperature on the carrier removal rate in GaN

A. A. Lebedev^a, V. V. Kozlovsky^ab, D. A. Malevskii^a, A. V. Sakharov^a, K. S. Davydovskaja^a, M. E. Levinshteĭn^a, A. E. Nikolaev<sup>a

a</sup> Ioffe Institute, 194021 St. Petersburg, Russia
^b Peter the Great St. Petersburg Polytechnic University, 195251 St. Petersburg, Russia

Abstract: Creation of devices based on wide-bandgap semicon- ductors is one of the fastest growing areas of modern electronics. The article compares the effect of irradiation temperature on the radiation resistance of GaN when irradiated with protons and electrons. The carrier removal rate in GaN was determined in the case of proton and electron irradiation at elevated temperatures. It was shown that, as in the case of SiC, there is a significant decrease in the carrier removal rate at an irradiation temperature of 200$^\circ$C, compared to irradiation at room temperature.

Received: 04.05.2025
Revised: 02.07.2025
Accepted: 02.07.2025

DOI: 10.61011/FTP.2025.04.61255.8005