Spectroscopy, interaction with radiation

Absorption and photoluminescence of ternary nanostructured Ge–S–Ga(In)glassy semiconductor systems

A. A. Babaev^a, V. Kh. Kudoyarova<sup>b

a</sup> Daghestan Institute of Physics after Amirkhanov
^b Ioffe Institute, St. Petersburg

Abstract: The photoluminescence and luminescence excitation spectra and the edge and IR absorption of Ge–S–Ga(In) glassy semiconductor systems are studied. The observed shifts of the optical-absorption edge, photoluminescence spectra (a decrease in their full width at half-maximum), and luminescence excitation spectra to lower energies upon the introduction of Ga or In into Ge–S binary systems are due to the fact that Ga or In tend to interact with sulfur, rather than with germanium. As the content of Ga(In) in the system increases, the intensity of the absorption band associated with vibrations of the Ge–S bond decreases.

Received: 13.08.2012
Accepted: 28.08.2012

 English version: Semiconductors, 2013, 47:7, 908–910

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