This article is cited in 3 papers

Electronic properties of semiconductors

New acceptor centers of the background impurities in $p$-CdZnTe

S. V. Plyatsko, L. V. Rashkovetskyi

Institute of Semiconductor Physics NAS, Kiev

Abstract: Low-temperature photoluminescence data are used to study the redistribution of the background impurities and host components of $p$-CdZnTe single crystals with a resistivity of 1–50 $\Omega$ cm upon their interaction with infrared laser radiation. The effect of widening of the band gap and the formation of new acceptor centers in response to laser-stimulated changes in the system of intrinsic defects are established. The activation energy of the new acceptor centers is determined.

Received: 24.05.2012
Accepted: 19.10.2012

 English version: Semiconductors, 2013, 47:7, 899–907

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