This article is cited in 6 papers

Electronic properties of semiconductors

Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field

В. В. Филиппов^a, E. N. Bormontov<sup>b

a</sup> Lipetsk State Pedagogical University
^b Voronezh State University

Abstract: A macroscopic model of the Hall effects and magnetoresistance in anisotropic semiconductor wafers is developed. The results obtained by solving the electrodynamic boundary problem allow the potential and eddy currents in anisotropic semiconductors to be calculated at different current-contact locations, depending on the parameters of the sample material’s anisotropy. The results of this study are of great practical importance for investigating the physical properties of anisotropic semiconductors and simulating the electron-transport phenomena in devices based on anisotropic semiconductors.

Received: 08.08.2012
Accepted: 24.09.2012

 English version: Semiconductors, 2013, 47:7, 884–891

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