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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2013 Volume 47, Issue 6, Pages 838–844 (Mi phts7938)

This article is cited in 1 paper

Manufacturing, processing, testing of materials and structures

DLTS Study of plastically deformed copper-doped $n$-type germanium

S. A. Shevchenko, A. I. Kolyubakin

Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region

Abstract: Classical deep level transient spectroscopy (DLTS) and its modification are used to study the time constants of electron capture by substitutional Cu$_s^{2-}$ atoms and thermal electron emission from Cu$_s^{3-}$ atoms in plastically deformed Cu-doped $n$-type germanium. The activation energy $E_\sigma$, the electron capture cross-section, the energy $E_3$ of the third acceptor level of Cu$_s^{3-}$ atoms, and the ionization entropy are determined. The lack of $E_3$-level broadening, the exponential capture kinetics for a filling-pulse duration of $t_p\lesssim$ 1 ms, the fact that the Cu$_s^{2-/3-}$-atom recombination parameters are independent of the dislocation density, and the low concentration of Cu$_s^{2-/3-}$ atoms in the deformed samples suggest that the DLTS spectra are due to Cu$_s^{2-/3-}$ atoms located outside the Read cylinders.

Received: 25.06.2012
Accepted: 20.07.2012


 English version:
Semiconductors, 2013, 47:6, 849–855

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