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Semiconductor physics
Injection photodiode based on an $n$-CdS/$p$-CdTe heterostructure
Sh. A. Mirsagatov,
R. R. Kabulov,
M. A. Makhmudov Physical-Technical Institute, Uzbekistan Academy of Sciences
Abstract:
The possibility of developing injection photodiodes with a tunable/reconfigurable photosensitivity spectrum in the spectral range of 500–800 nm based on an
$n$-CdS/
$p$-CdTe heterostructure is shown. It is established that such a structure in the short-wavelength region
$\lambda$ = 500 nm has the highest spectral sensitivity
$S_\lambda\approx$ 3 A/W in the forward direction at a bias voltage of
$V$ = +120 mV and
$S_\lambda\approx$ 2 A/W in the reverse direction at a bias voltage of
$V$ = -120 mV. The integrated sensitivity of the device is
$S_{\mathrm{int}}$ = 2 400 A/lm under illumination with white light
$E$ = 3
$\times$ 10
$^{-2}$ lx, at a bias voltage of
$V$ = +4.6 V, and temperature of
$T$ = 293 K. Upon illumination with the monochromatic light of an LG-75 laser with the wavelength
$\lambda$ = 625 nm,
$S_{\mathrm{int}}$ = -1400 A/W (illumination power
$P$ = 18
$\cdot$ 10
$^{-6}$ W/cm
$^2$, bias voltage
$V$ = +4.6 V, and temperature
$T$ = 293 K). High values of
$S_\lambda$ and
$S_{\mathrm{int}}$ provide the highly efficient transformation of light energy into electrical energy at low illumination levels (
$P<18$ $\times$ 10
$^{-6}$ W/cm
$^2$)
Received: 01.08.2012
Accepted: 19.09.2012
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