This article is cited in 2 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Energy relaxation of nonequilibrium electrons in a nanotube formed by a rolled-up quantum well

S. M. Seid-Rzaeva

Institute of Physics Azerbaijan Academy of Sciences

Abstract: The energy relaxation processes of excess electrons on the surface of a semiconductor nanotube are studied. A general analytical expression for the relaxation time of the energy of nonequilibrium electrons is derived taking into account possible intersubband transitions at an arbitrary ratio of nanotube and polaron radii $r_0/r_p$. Numerical calculations for GaAs semiconductor nanotube are performed.

Received: 25.06.2012
Accepted: 28.08.2012

 English version: Semiconductors, 2013, 47:6, 804–807

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