This article is cited in 14 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Charge transport mechanisms in anisotype $n$-ТiО$_2$/$p$-Si heterostructures

A. I. Mostovyi^a, V. V. Brus^b, P. D. Mar'yanchuk<sup>a

a</sup> Chernivtsi National University named after Yuriy Fedkovych
^b Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Kiev

Abstract: Anisotype $n$-ТiО$_2$/$p$-Si heterojunctions are fabricated by the deposition of a TiO$_2$ film on a polished poly-Si substrate using magnetron sputtering. The electrical properties of the heterojunctions are investigated and the dominant charge transport mechanisms are established; these are multi-step tunneling recombination via surface states at the metallurgical TiO$_2$/Si interface at low forward biases $V$ and tunneling at $V>$ 0.6 V. The reverse current through the heterojunctions under study is analyzed within the tunneling mechanism.

Received: 24.05.2012
Accepted: 04.06.2012

 English version: Semiconductors, 2013, 47:6, 799–803

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