Electronic properties of semiconductors

Method for determination of the degree of compensation for electrically active impurities in multivalley semiconductors

P. I. Baransky^a, G. P. Gaidar<sup>b

a</sup> Institute of Semiconductor Physics NAS, Kiev
^b Institute for Nuclear Research of the National Academy of Sciences of Ukrainian

Abstract: A method for determination of the degree of compensation $k = N_a /N_d$ for shallow impurities in $n$-Si crystals with a nondegenerate electron gas is suggested. Data facilitating practical determination of the degree of compensation are given.

Received: 15.03.2012
Accepted: 19.09.2012

 English version: Semiconductors, 2013, 47:6, 745–748

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