This article is cited in 6 papers

Manufacturing, processing, testing of materials and structures

Ionic conductivity and dielectric relaxation in $\gamma$-irradiated TlGaTe$_2$ crystals

R. M. Sardarly^a, O. A. Samedov^a, A. P. Abdullayev^a, E. K. Huseynov^b, F. T. Salmanov^a, N. A. Aliyeva^a, R. Sh. Agaeva<sup>a

a</sup> Institute of radiation problems, ANAS
^b Institute of Physics Azerbaijan Academy of Sciences

Abstract: The switching effect, field and temperature dependences of the permittivity and conductivity of TlGaTe$_2$ crystals subjected to various $\gamma$-irradiation doses are studied. Under rather low electric fields, the phenomenon of threshold switching with an $S$-shaped current-voltage characteristic containing a portion with negative differential resistance is observed in the crystals. In the region of critical voltages, current and voltage oscillations and imposed modulation are observed. Possible mechanisms of switching, ionic conductivity, disorder, and electrical instability in TlGaTe$_2$ crystals are discussed.

Received: 03.04.2012
Accepted: 09.04.2012

 English version: Semiconductors, 2013, 47:5, 707–712

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