This article is cited in 3 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

V. Ya. Aleshkin^a, A. A. Dubinov^a, M. N. Drozdov^a, B. N. Zvonkov^b, K. E. Kudryavtsev^a, A. A. Tonkikh^ac, A. N. Yablonskii^a, P. Werner<sup>c

a</sup> Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^c Max Planck Institute of Microstructure Physics, D-06120 Halle (Saale), Germany

Abstract: GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In$_{0.28}$Ga$_{0.72}$As and Ge layers, indirect in coordinate space, but direct in momentum space.

Received: 09.07.2012
Accepted: 20.07.2012

 English version: Semiconductors, 2013, 47:5, 636–640

Bibliographic databases:

•