This article is cited in 7 papers

Surface, interfaces, thin films

Gallium-oxide films obtained by thermal evaporation

V. M. Kalygina, A. N. Zarubin, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, S. Yu. Tsupiy, T. M. Yaskevich

Siberian Physical-Technical Institute of the Tomsk State University

Abstract: The current-voltage (I–V), capacitance-voltage ($C$–$V$), and conductance-voltage ($G$–$V$) characteristics of metal/Ga$_x$O$_y$/GaAs/metal structures are investigated. Gallium-oxide films with a thickness of 150–170 nm are deposited by the thermal evaporation of Ga$_2$O$_3$ powder onto $n$-type GaAs substrates with the donor concentration $N_d$ = 2 $\times$ 10$^{16}$ cm$^{-3}$. Treatment of the Ga$_x$O$_y$ films in oxygen plasma causes a decrease in both the forward and reverse currents and a shift of the $C$–$V$ and $G$–$V$ curves to higher positive voltages. The Fermi level at the insulator/semiconductor interface in the structures under study is unpinned. The density of states at the Ga$_x$O$_y$ /GaAs interface is $N_t$ = (2–6) $\times$ 10$^{12}$ eV$^{-1}$cm$^{-2}$.

Received: 23.07.2012
Accepted: 13.08.2012

 English version: Semiconductors, 2013, 47:5, 612–618

Bibliographic databases:

•