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5 papers
Manufacturing, processing, testing of materials and structures
Study of the characteristics of photoresistors based on hydrochemically deposited films of Pb$_{0.902}$Sn$_{0.098}$Se solid solution
Kh. N. Mukhametzyanov,
V. F. Markov,
L. N. Maskaeva Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
Abstract:
Experimental samples of photoresistors based on a Pb
$_{0.902}$Sn
$_{0.098}$Se-solid solution semiconductor films obtained by the layer-by-layer deposition of individual selenides of lead and tin(II) with subsequent thermal activation are developed. The structure and morphology of the thin-film compositions (SnSe–PbSe)
$_2$ are studied. The temperature dependences of the dark resistance, signal, noise and its ratio, as well as the frequency and spectral characteristics of photoresistors fabricated on the basis of Pb
$_{0.902}$Sn
$_{0.098}$Se films in the range of 205–300 K are studied. The optimal bias voltages are determined. It is shown that the location of the maximum and the right boundary of the photoresponse for Pb
$_{0.902}$Sn
$_{0.098}$Se-based photoresistors is shifted, in comparison with PbSe, toward the long-wavelength region by 0.7
$\mu$m. The maximal detectivity of the studied photoresistors (2.0
$\times$ 2.0 mm) obtained at 230 K was 9
$\times$ 10
$^9$ cm W
$^{-1}$ Hz
$^{1/2}$. The advantages of using the Pb
$_{0.902}$Sn
$_{0.098}$Se-based photoresistors in the spectral range of 3.0–5.5
$\mu$m compared with PbSe-based ones are shown.
Received: 04.06.2012
Accepted: 15.06.2012
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