This article is cited in 3 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

On the electrically detected cyclotron resonance of holes in silicon nanostructures

N. T. Bagraev, D. S. Gets, È. Yu. Danilovskii, L. E. Klyachkin, A. M. Malyarenko

Ioffe Institute, St. Petersburg

Abstract: The cyclotron resonance in semiconductor nanostructures is electrically detected for the first time without an external cavity, a source, and a detector of microwave radiation. An ultranarrow $p$-Si quantum well on an $n$-Si (100) surface confined by superconducting heavily boron-doped $\delta$-shaped barriers is used as the object of investigation and provides microwave generation within the framework of the nonstationary Josephson effect. The cyclotron resonance is detected upon the presence of a microcavity, which is incorporated into the quantum-well plane, by measuring the longitudinal magnetoresistance under conditions of stabilization of the source-drain current. The cyclotron-resonance spectra and their angular dependences measured in a low magnetic field identify small values of the effective mass of light and heavy holes in various 2D subbands due to the presence of edge channels with a high mobility of carriers.

Received: 11.10.2012
Accepted: 18.10.2012

 English version: Semiconductors, 2013, 47:4, 525–531

Bibliographic databases:

•