A. P. Baraban, P. P. Konorov, V. A. Dmitriev, V. A. Prokof’ev, “Specific features of the field generation of minority charge carriers in Si–SiO<nobr>$_2$</nobr> structures”, Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 4,Pages <nobr>490

Semiconductor structures, low-dimensional systems, quantum phenomena

Specific features of the field generation of minority charge carriers in Si–SiO$_2$ structures

A. P. Baraban, P. P. Konorov, V. A. Dmitriev, V. A. Prokof’ev

Saint Petersburg State University

Abstract: The specific features of generation processes occurring in Si–SiO$_2$ structures in the presence of a strong electric field in the oxide layer ($E_{\mathrm{ox}}\approx$ 10 MV cm$^{-1}$) are considered. It is shown that, after a certain threshold electric-field strength is reached, an additional mechanism of minority charge-carrier generation, associated with the development of electroluminescence processes in the oxide layer, becomes operative.

Received: 14.06.2012
Accepted: 25.06.2012